The effects of interdiffusion on the subbands in Ga{sub x}In{sub 1{minus}x}N{sub 0.04}As{sub 0.96}/GaAs quantum well for 1.3 and 1.55 {mu}m operation wavelengths

Journal Article · Sun Jul 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1370110· OSTI ID:40204351

Chan, Michael C. Y.; Surya, Charles; Wai, P K. A.

The interdiffusion of Ga{sub x}In{sub 1{minus}x}N{sub 0.04}As{sub 0.96}/GaAs single quantum well (QW) structure with well width of 6 nm is studied theoretically. The as-grown Ga concentration in the QW is chosen to be 0.7 and 0.6 for the operation wavelengths of 1.3 and 1.55 {mu}m, respectively. We studied the effects of interdiffusion on the in-plane strain, confinement potential, and subband energy levels of the QW using Fick{close_quote}s law. The diffusion coefficients of both the well and barrier layers are assumed to be constant. The effects of valence band mixing and strains are included in the calculation of the electron and hole subband structures. We find that the group-III interdiffusion effects can result in blueshifts of 123 and 211 nm in the Ga{sub x}In{sub 1{minus}x}N{sub 0.04}As{sub 0.96}/GaAs QW at operation wavelength of 1.3 {mu}m (x=0.7) and 1.55 {mu}m (x=0.6), respectively. Our results show that interdiffusion technique can be used to tune the operating wavelengths of GaInAsN/GaAs lasers for multiwavelength applications such as in the sources of dense wavelength division multiplexed optical communication systems. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204351
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMMUNICATIONS
CONFINEMENT
DIFFUSION
ELECTRONS
ENERGY LEVELS
LASERS
PHYSICS
STRAINS
VALENCE
WAVELENGTHS