Structural, electrical, and optical properties of SnO{sub 2} nanocrystalline thin films grown on p-InSb (111) substrates

Journal Article · Sun Jul 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1372159· OSTI ID:40204347

Kim, T W; Lee, D U; Lee, J H; Choo, D C; Jung, M; Yoon, Y S

SnO{sub 2} thin films were grown on p-InSb (111) substrates by radio-frequency magnetron sputtering at low temperature. Atomic force microscopy images showed that the root mean square of the average surface roughness of the SnO{sub 2} films grown on the InSb (111) substrates with an Ar/O{sub 2} flow rate of 0.667 and at a temperature of 200{degree}C had a minimum value of 2.71 nm, and x-ray diffraction and transmission electron microscopy (TEM) measurements showed that these SnO{sub 2} thin films were polycrystalline. Auger electron spectroscopy and bright-field TEM measurements showed that the SnO{sub 2}/p-InSb(111) heterointerface was relatively abrupt. High-resolution TEM measurements revealed that the SnO{sub 2} films were nanocrystalline and that the grain sizes of the nanocystalline films were below 6.8 nm. The capacitance{endash}voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO{sub 2} film were n type and approximately 1.67{times}10{sup 16}cm{sup {minus}3}, respectively, and the current{endash}voltage curve indicated that the Au/n-SnO{sub 2}/p-InSb diode showed tunneling breakdown. Photoluminescence spectra showed that peaks corresponding to the donor acceptor pair transitions were dominant and that the peak positions did not change significantly as a function of the measured temperature. These results indicate that the SnO{sub 2} nanocrystalline thin films grown on p-InSb (111) substrates at low temperature hold promise for new kinds of potential optoelectronic devices based on InSb substrates, such as superior gas sensors and high-efficiency solar cells. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204347
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ATOMIC FORCE MICROSCOPY
AUGER ELECTRON SPECTROSCOPY
FLOW RATE
GRAIN SIZE
OPTICAL PROPERTIES
SOLAR CELLS
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION