Structural characterization of InSb thin films grown by electrodeposition

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917972· OSTI ID:22490428

Singh, Joginder; Rajaram, P. ^[1]

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1. School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

• OSTI ID: 22490428
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY CHLORIDES
AQUEOUS SOLUTIONS
BRASS
DISLOCATIONS
ELECTROCHEMISTRY
ELECTRODEPOSITION
EV RANGE
FOURIER TRANSFORMATION
INDIUM ANTIMONIDES
INDIUM CHLORIDES
INFRARED SPECTRA
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SPECTROPHOTOMETRY
STRAINS
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZINC SULFIDES