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Title: Growth and properties of crystalline CuInSe{sub 2} thin films by SPD technique

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4947932· OSTI ID:22608704
;  [1]
  1. School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)

CuInSe{sub 2} thin films were grown on glass substrates using the chemical spray pyrolysis technique. The CuInSe{sub 2} films were co-deposited from aqueous solutions containing CuCl{sub 2}, InCl{sub 3}, and SeO{sub 2} used as Cu, In and Se precursors respectively. EDC was used as a complexing agent and films were grown at the constant temperature of 270°C. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Energy dispersive analysis of X-rays (EDAX) and the results indicate that the films are single phase, p-type in conductivity and have the chalcopyrite structure. Optical study shows that the optical band gap value is 1.03 eV. From the XRD study it is clear that the average crystallite size of the films is in the range 50 to 70 nm.

OSTI ID:
22608704
Journal Information:
AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English