Fabrication and characteristics of submicron tunneling junctions on high T{sub c} superconducting c-axis thin films and single crystals

Journal Article · Fri Jun 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1361267· OSTI ID:40204158

Kim, S -J; Yamashita, T

We report successful fabrication and characteristics of submicron-size tunneling junctions using c-axis YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} (YBCO) thin films of 800 nm thickness and Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}(Bi-2212) single-crystal whiskers. The junctions were made using a three-dimensional focused-ion-beam etching method. First, a microbridge was patterned in a required junction width by normal direction etching. By tilting the sample stage up to 90{degree}, two grooves on the bridge were etched from the lateral direction in order to create the required junction size. The 60 K YBCO junctions did not show any degradation of critical current density (J{sub c}) down to an in-plane area of 0.5 {mu}m2 and showed current{endash}voltage (I{endash}V) characteristics of the collective switching transition from the zero voltage state to the resistive state. For Bi-2212 stacks smaller than 1 {mu}m2, we identified some of the features of charging effects on the I{endash}V characteristics. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204158
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 89; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRITICAL CURRENT
ETCHING
FABRICATION
MONOCRYSTALS
PHYSICS
THICKNESS
THIN FILMS
TUNNELING