Intrinsic Josephson effect devices of TI-2212 thin films
- Department of Electronics, Nankai University, Tianjin 300071, Peoples Republic of (China)
Intrinsic Josephson effect devices from Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (Tl-2212) thin films were investigated. The device was produced by epitaxially growing a Tl-2212 thin film on a LaAlO{sub 3} substrate with the surface cut at a small angle to the LaAlO{sub 3}(001) plane, and by patterning a microbridge in the proper direction. The I{endash}V characteristics of the microbridges exhibit large hysteresis at low temperatures, and the temperature dependence of the critical current I{sub c}(T) is in good agreement with the theoretical Ambegaokar{endash}Baratoff relation for superconductor{endash}insulator{endash}superconductor (SIS) junctions. The I{endash}V curves also show multibranches for longer microbridges. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 530054
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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