In situ observation of stress relaxation in CdTe/ZnTe heterostructures by reflectance-difference spectroscopy

Journal Article · Mon Jun 04 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1378050· OSTI ID:40203170

Balderas-Navarro, R E; Hingerl, K; Bonanni, A; Sitter, H; Stifter, D

The first stages of epitaxial growth of CdTe on ZnTe and ZnTe on CdTe are monitored with reflectance difference spectroscopy. Spectroscopic reflectance difference data show strong optical anisotropy responses at the critical points of the bulk dielectric function at the E{sub 0}, E{sub 1}, and E{sub 1}+{Delta}{sub 1} interband transitions of ZnTe, respectively, CdTe, which indicate that anisotropic in-plane strain occurs during epitaxial growth. Applying a model it is possible to determine the in-plane strain due to the disbalance of 60{degree} dislocations along [1{bar 1}0] and [110]. Kinetic reflectance difference data taken at the E{sub 1} transition of the respective material exhibit with an accuracy of one monolayer the onset of the formation of misfit dislocations for these material systems. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40203170
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 78; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACCURACY
ANISOTROPY
DIELECTRIC MATERIALS
DISLOCATIONS
KINETICS
PHYSICS
SPECTROSCOPY
STRAINS
STRESS RELAXATION