Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

LOW NOISE SOLID STATE AMPLIFIERS FOR SEMICONDUCTOR DETECTORS

Journal Article · · Nucl. Instr. Methods

The use of a tunnel diode and of a field effect transistor in the input stage of an amplifier for semiconductor detectors is discussed. The noise performance of the amplifiers is calculated and measured data are given. A simple and stable field-effect transistor amplifler giving a resolution of 5 kev (FWHM) is described. (auth)

Research Organization:
Inst. of Physics, Uppsala
NSA Number:
NSA-18-020366
OSTI ID:
4010948
Journal Information:
Nucl. Instr. Methods, Journal Name: Nucl. Instr. Methods Vol. Vol: 26
Country of Publication:
Country unknown/Code not available
Language:
English

Similar Records

State of the Art of Low Noise Amplifiers for Semiconductor Radiation Detectors
Conference · Tue Sep 10 00:00:00 EDT 1968 · OSTI ID:1867189

LOW NOISE TRANSISTOR AMPLIFIERS FOR SOLID STATE DETECTORS
Journal Article · Sat Dec 31 23:00:00 EST 1960 · IRE Trans. Nuclear Sci. · OSTI ID:4100156

Amplifier for semiconductor alpha detectors
Journal Article · Fri Dec 31 23:00:00 EST 1971 · Tr. Soyuznogo Nauch.-Issled. Inst. Priborostr., no. 19, pp. 66-73 · OSTI ID:4348241