Integrated two-stage processing of microcrystalline silicon thin films on SiO{sub 2} and glass

Book · Sun Dec 01 04:00:00 EST 1996

OSTI ID:400682

Wolfe, D; Wang, F; Lucovsky, G ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States)

A novel two-stage low temperature plasma assisted deposition process, which separates interface formation from bulk film growth, was investigated for deposition of in-situ phosphorus doped microcrystalline silicon ({micro}c-Si) thin films on SiO{sub 2} and glass substrates. The authors find that the bulk layer microstructure, as characterized by reflection high energy electron diffraction and Raman scattering spectroscopy, is the same whether or not a buffer layer is used. However, they find significant differences in the room temperature dark conductivity, and the dark conductivity activation energies.

• OSTI ID: 400682
• Report Number(s): CONF-960401--; ISBN 1-55899-332-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AUGER ELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
FABRICATION
GAS FLOW
HELIUM
HYDROGEN
INTERFACES
PHOSPHINES
PHOSPHORUS ADDITIONS
PLASMA
RAMAN SPECTROSCOPY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SUBSTRATES
SURFACE CLEANING