Studies of the effect of various gas species on Si-SiO{sub 2} interface charges and surface roughness for rapid thermal deposited gate oxides
- North Carolina State Univ., Raleigh, NC (United States)
The formation of Si-SiO{sub 2} interfaces for 40--60 {angstrom} rapid thermal CVD (RTCVD) MOS gate oxides has been studied, using cluster tool technology. SiH{sub 4}/N{sub 2}O chemistry is used to deposit stoichiometric oxides. In-situ thermal treatments, prior to oxide deposition, typically at 800--900 C, 30--60 sec, and 50 Torr. are conducted using O{sub 2}, N{sub 2}O, SiH{sub 4}, NH{sub 3}, HCl/N{sub 2} and HCl/O{sub 2}. The effect of gas flow ratios during temperature ramp-up for RTCVD interface formation is also studied. This paper presents a new quick-turnaround approach for non-destructive evaluation of Si-SiO{sub 2} interface quality for fully fabricated devices, in terms of interface charges and surface roughness.
- OSTI ID:
- 400668
- Report Number(s):
- CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%73
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR MATERIALS
FABRICATION
INTERFACES
SILICON
CHEMICAL VAPOR DEPOSITION
SILICON OXIDES
ROUGHNESS
CHARGE DENSITY
SEMICONDUCTOR DEVICES
PHOSPHORUS ADDITIONS
SURFACES
HEAT TREATMENTS
OXYGEN
NITROUS OXIDE
SILANES
AMMONIA
HYDROCHLORIC ACID
NITROGEN
GAS FLOW
EXPERIMENTAL DATA