Studies of the effect of various gas species on Si-SiO{sub 2} interface charges and surface roughness for rapid thermal deposited gate oxides

Book · Sun Dec 01 04:00:00 EST 1996

OSTI ID:400668

Bayoumi, A M; Hauser, J R ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States)

The formation of Si-SiO{sub 2} interfaces for 40--60 {angstrom} rapid thermal CVD (RTCVD) MOS gate oxides has been studied, using cluster tool technology. SiH{sub 4}/N{sub 2}O chemistry is used to deposit stoichiometric oxides. In-situ thermal treatments, prior to oxide deposition, typically at 800--900 C, 30--60 sec, and 50 Torr. are conducted using O{sub 2}, N{sub 2}O, SiH{sub 4}, NH{sub 3}, HCl/N{sub 2} and HCl/O{sub 2}. The effect of gas flow ratios during temperature ramp-up for RTCVD interface formation is also studied. This paper presents a new quick-turnaround approach for non-destructive evaluation of Si-SiO{sub 2} interface quality for fully fabricated devices, in terms of interface charges and surface roughness.

• OSTI ID: 400668
• Report Number(s): CONF-960401--; ISBN 1-55899-332-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
CHARGE DENSITY
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
FABRICATION
GAS FLOW
HEAT TREATMENTS
HYDROCHLORIC ACID
INTERFACES
NITROGEN
NITROUS OXIDE
OXYGEN
PHOSPHORUS ADDITIONS
ROUGHNESS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SILICON OXIDES
SURFACES