Structural differences between CVD and thermally grown amorphous SiO{sub 2}

Book · Sun Dec 31 04:00:00 EST 1995

OSTI ID:375969

Makabe, M; Hirose, K; Ishikawa, H; Ono, H; Ishitani, A ^[1]; Mizuki, J ^[2]

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1. NEC Corp., Sagamihara, Kanagawa (Japan). ULSI Device Development Labs.
2. NEC Corp., Tsukuba, Ibaraki (Japan). Fundamental Research Labs.

The structure and density of amorphous SiO{sub 2} films grown by chemical vapor deposition (CVD) or thermal oxidation are studied by Fourier-transform infrared (FT-IR) absorption, neutron diffraction, and Rutherford backscattering (RBS) measurements. CVD oxides, formed in an atmospheric-pressure CVD reactor with a SiH{sub 4}-O{sub 2} gas mixture at 400 C, are compared with thermal oxides, grown at 980 C in H{sub 2}-O{sub 2} atmosphere. The average Si-O-Si bond angle deduced from the stretching frequency of FT-IR is found to be smaller in CVD oxides than in thermal oxides, and the density revealed by RBS measurements is found to be a little lower in CVD oxides than in thermal oxides. These differences are explained by the medium-range structural disorder revealed by FT-IR measurements as well as by neutron diffraction measurements. The medium-range structural disorder in CVD oxides is responsible for large silanol content in the oxides and is the origin in difference between CVD and thermal oxides.

• OSTI ID: 375969
• Report Number(s): CONF-941144--; ISBN 1-55899-255-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL BONDS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
SEMICONDUCTOR DEVICES
SILICON