Characterization of thin silicon oxynitride films prepared by low pressure rapid thermal chemical vapor deposition

Journal Article · Fri Oct 01 00:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2220941· OSTI ID:5867369

Xu, X L; McLarty, P K; Brush, H; Misra, V; Wortman, J J ^[1]; Harris, G S ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Electrical and Computer Engineering
2. North Carolina State Univ., Raleigh, NC (United States). Dept. of Material Science and Engineering

Thin silicon oxynitride (Si-N-O) films have been deposited using low pressure rapid thermal chemical vapor deposition (RTCVD), with silane (SiH[sub 4]), nitrous oxide (N[sub 2]O), and ammonia (NH[sub 3]) as the reactive gases. Structural and kinetic studies indicate that an increase in the NH[sub 3]/N[sub 2]O flow rate ratio leads to an increase N/O atomic ratio and a decreased Si-N-O deposition rate for constant SiH[sub 4] and N[sub 2]O flow rates. Experimental results show that RTCVD Si-N-O films with high throughput at low thermal budget, uniform composition, and atomically flat interface can be achieved using a SiH[sub 4]/NH[sub 3]/N[sub 2]O gas mixture. Electrical characterization of poly Si/Si-N-O/Si capacitors demonstrates that for NH[sub 3]/N[sub 2]O flow rate ratios ranging from 20 to 100%, the mid-gap interface trap densities of the deposited Si-N-O films are [<=]2 [times] 10[sup 10] eV[sup [minus]1] cm[sup [minus]2] and Fowler-Nordheim electron-tunneling rather than Frenkel-Poole thermal-emission is the dominant conduction mechanism in the thin RTCVD Si-N-O films.

• OSTI ID: 5867369
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 140:10; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
CHEMICAL VAPOR DEPOSITION
SILICON OXIDES
VAPOR DEPOSITED COATINGS
ELECTRIC CONDUCTIVITY
AMMONIA
CAPACITORS
CHEMICAL REACTION KINETICS
EXPERIMENTAL DATA
FABRICATION
FLOW RATE
NITROUS OXIDE
SEMICONDUCTOR MATERIALS
SILANES
CHALCOGENIDES
CHEMICAL COATING
COATINGS
DATA
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
KINETICS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NITROGEN OXIDES
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REACTION KINETICS
SILICON COMPOUNDS
SURFACE COATING
360601* - Other Materials- Preparation &amp; Manufacture
360606 - Other Materials- Physical Properties- (1992-)