Microstructure of directionally solidified CrAs/GaAs eutectic
- Electronic Materials Engineering, Camarillo, CA (United States)
The microstructure of the CrAs/GaAs eutectic directionally solidified by both the Czochralski (Cz) and vertical Bridgman (VB) methods consists of arrays of CrAs rods oriented along the axis of solidification in a GaAs matrix. Microdefects in Cz material including striations, terminations and nucleations, coalescence and branching, and oscillatory instabilities are prevalent and are the result of dynamic morphological adjustment under fluctuating conditions of microscopic solidification. In contrast, selected regions of VB material exhibit near-ideal hexagonal packing of circular rods in the matrix. Cause-effect relationships between microstructure and conditions of solidification were determined and are presented and discussed.
- OSTI ID:
- 39813
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 4 Vol. 30; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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