TEM/HREM structural characterization of directionally solidified GaAs-CrAs eutectic crystals
Book
·
OSTI ID:479262
- Lawrence Berkeley Lab., CA (United States). Material Science Div.
- Electronic Materials Engineering, Camarillo, CA (United States)
Conventional and high resolution electron microscopy have been applied to characterize the microstructure of the CrAs-GaAs eutectic. The CrAs-GaAs eutectic crystals were directionally solidified by the Czochralski method in order to produce an ordered array of CrAs rods embedded in a GaAs matrix. The CrAs rods of 2--3 {micro}m in diameter align parallel to the growth axis of the ingot. Where the GaAs matrix is found to contain structural defects, the CrAs rods are effectively defect-free. The CrAs has an orthorhombic structure with the parameters a = 3.5 {+-} 0.1 {angstrom}, b = 6.2 {+-} 0.1 {angstrom}, c = 5.7 {+-} 0.1 {angstrom}. The c-axis is close to the direction of solidification.
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 479262
- Report Number(s):
- CONF-951155--; ISBN 1-55899-301-0
- Country of Publication:
- United States
- Language:
- English
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