Real time, in-situ temperature monitoring using diffuse reflectance spectroscopy

Conference · Thu Oct 31 23:00:00 EST 1996

OSTI ID:397130

Booth, J L; Beard, B T ^[1]; Pearsall, T P; Wang, Z Z ^[2]; Stevens, J E; Blain, M G; Meisenheimer, T L ^[3]

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1. Thermionics Northwest, Inc., Port Townsend, WA (United States)
2. Washington Univ., Seattle, WA (United States). Dept. of Electrical Engineering
3. Sandia National Labs., Albuquerque, NM (United States)

Real time temperature measurements have been performed on both GaAs and silicon substrates during wafer processing using a technique based upon diffuse reflectance spectroscopy (DRS). Good temperature resolution ({+-}O.4 {degrees}C) and rapid updates have enabled the process control potential of the device to be demonstrated.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 397130
• Report Number(s): SAND--96-2198C; CONF-9609273--1; ON: DE96014502
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ETCHING
GALLIUM ARSENIDES
OPTICAL PYROMETERS
PERFORMANCE
REAL TIME SYSTEMS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE MONITORING