{ital In} {ital situ} wafer temperature monitoring of silicon etching using diffuse reflectance spectroscopy
- Thermionics NW, Inc., Port Townsend, Washington 98368 (United States)
- Microelectronics Development Laboratory, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Real time, {ital in} {ital situ} temperature measurements during chemical downstream etching of silicon wafers have been performed using a diffuse reflectance spectroscopy based sensor [Weilmeier {ital et} {ital al}., Can. J. Phys. {bold 69}, 422 (1991)]. The spectrometer has a spatial resolution of 1 cm{sup 2}, updates the temperature every 2 s, and has a temperature resolution of better than 1{degree}C. The thermal time constant the wafers and the thermally regulated electrostatic chuck (10{degree}C{lt}{ital T}{lt}90{degree}C) varied between 7 and 30 s depending on clamping and backside gas pressure. The exothermic etch process is accompanied by increases in the silicon wafer temperature consistent with the thermal conductivity conditions and with the etch chemistry. The temperature uniformity across the wafers was better than 2{degree}C during the entire etch process. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 288950
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 14; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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