skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Micromachined silicon electrostatic chuck

Abstract

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space tomore » allow the distribution of the helium thermal-contact gas. 6 figs.« less

Inventors:
;
Publication Date:
Research Org.:
AT&T Corporation
OSTI Identifier:
415766
Patent Number(s):
US 5,583,736/A/
Application Number:
PAN: 8-341,089
Assignee:
Dept. of Energy, Washington, DC (United States) SNL; SCA: 360601; PA: EDB-97:015284; SN: 97001714608
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 10 Dec 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MATERIALS HANDLING EQUIPMENT; DESIGN; SILICON; ETCHING; MASKING

Citation Formats

Anderson, R.A., and Seager, C.H.. Micromachined silicon electrostatic chuck. United States: N. p., 1996. Web.
Anderson, R.A., & Seager, C.H.. Micromachined silicon electrostatic chuck. United States.
Anderson, R.A., and Seager, C.H.. Tue . "Micromachined silicon electrostatic chuck". United States.
@article{osti_415766,
title = {Micromachined silicon electrostatic chuck},
author = {Anderson, R.A. and Seager, C.H.},
abstractNote = {An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 10 00:00:00 EST 1996},
month = {Tue Dec 10 00:00:00 EST 1996}
}