Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586857· OSTI ID:147064

Johnson, S R; Lavoie, C; Tiedje, T ^[1]

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1. Univ. of British Columbia (Canada); and others

The temperature of semiconductor substrates used in molecular beam epitaxy is determined from the diffuse reflection spectrum (DRS) of the substrates, measured with an external light source. The relative sensitivity of the technique is better than 1 {degrees}C. The absolute calibration of the DRS technique for substrates of different thickness, conductivity and back surface texture, is described. The DRS technique is also sensitive to changes in front surface roughness as demonstrated by the increase in th diffuse reflectance at short wavelengths when the oxide desorbs., 6 refs., 5 figs.

• OSTI ID: 147064
• Report Number(s): CONF-9210296--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CRYSTAL GROWTH
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
ROUGHNESS
SPECTROSCOPY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT
TEXTURE
THICKNESS