GaAs Substrate Recycling Using in-situ Deposited NaCl Layers via Molecular Beam Epitaxy
This work presents an alternative method to conventional III-V substrate recycling methods via growth of NaCl on nearly-lattice matched GaAs (001) substrates. Reflection high energy electron diffraction and transmission electron microscopy confirm an epitaxial relationship between the NaCl layers and the underlying GaAs. If the sample is heated too much prior to GaAs deposition, the NaCl fully desorbs from the surface. The quality of the deposition of GaAs on NaCl ranges from amorphous at low temperature to polycrystalline at intermediate temperatures. Exposure to electron beams during growth results in larger and (001) textured grains. The substrate is separated from the GaAs film in seconds via submersion in water, revealing a substrate surface comparable to the original.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- Shell International Exploration and Production Inc.
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1889436
- Report Number(s):
- NREL/PR-5900-77001; MainId:24964; UUID:7e0e5af2-205d-4719-b46f-2135cb232767; MainAdminID:65461
- Country of Publication:
- United States
- Language:
- English
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