Carbon molecular beam epitaxy on various semiconductor substrates

Journal Article · Mon Oct 15 04:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.04.123· OSTI ID:22215495

Jerng, S. K.; Yu, D. S.; Lee, J. H.; Kim, Y. S. ^[1]; Kim, C.; Yoon, S. ^[2]

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1. Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)
2. Department of Physics, Ewha University, Seoul 151-747 (Korea, Republic of)

Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III–V (GaAs, GaN, InP), and group II–VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

• OSTI ID: 22215495
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 10 Vol. 47; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
GALLIUM ARSENIDES
GALLIUM NITRIDES
GRAPHENE
GRAPHITE
INDIUM PHOSPHIDES
LAYERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
ZINC OXIDES
ZINC SELENIDES