Reactive ion etching of AlN, AlGaN, and GaN using BCl{sub 3}

Conference · Fri Nov 01 04:00:00 EST 1996

OSTI ID:395030

Hughes, W C; Rowland, Jr, W H; Johnson, M A.L.; Cook, Jr, J W; Schetzina, J F ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics

The III-V nitrides are promising materials for use in UV-blue-green optoelectronics, high-temperature electronics, and negative-electron-affinity (NEA) electron emitter applications. In order to realize this potential, it is important to develop an etching technology for device fabrication. The stability of the III-V nitrides to harsh chemical environments makes most wet etching extremely difficult, so that dry etching alternatives are desirable. Recent experiments have shown that BCl{sub 3}-based chemistries are effective for reactive ion etching of GaN and that KOH-based solutions may preferentially etch AlN from GaN. This paper reports on the use of BCl{sub 3} for etching AlN and AlGaN in addition to GaN and the creation of structures such as mesas and lines. It also examines the potential use of potassium Hydroxide (KOH) as a wet etchant of the nitrides. AlN, AlGaN, and GaN films grown by either metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) were patterned with Ni in 250 {micro}m x 250 {micro}m squares and 5 {micro}m wide lines to create mesas and lines for typical light emitting diode (LED) or laser diode applications. Reactive ion etching was performed in a commercial reactor using BCl{sub 3} pressures ranging from 5 to 30 mTorr. Subsequent wet etching of these lines showed that KOH-based solutions such as AZ400K developer attack not only AlN but also GaN depending upon the quality of the film. Possibilities for using this wet etch as a defect etchant or selective etch of nitrides on SiC are discussed.

• OSTI ID: 395030
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
ELECTRONIC EQUIPMENT
ETCHING
GALLIUM NITRIDES
ION BEAMS
MOLECULAR BEAM EPITAXY
PLASMA
POTASSIUM HYDROXIDES
RF SYSTEMS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON CARBIDES