Reactive ion etching of AlN, AlGaN, and GaN using BCl{sub 3}
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics
The III-V nitrides are promising materials for use in UV-blue-green optoelectronics, high-temperature electronics, and negative-electron-affinity (NEA) electron emitter applications. In order to realize this potential, it is important to develop an etching technology for device fabrication. The stability of the III-V nitrides to harsh chemical environments makes most wet etching extremely difficult, so that dry etching alternatives are desirable. Recent experiments have shown that BCl{sub 3}-based chemistries are effective for reactive ion etching of GaN and that KOH-based solutions may preferentially etch AlN from GaN. This paper reports on the use of BCl{sub 3} for etching AlN and AlGaN in addition to GaN and the creation of structures such as mesas and lines. It also examines the potential use of potassium Hydroxide (KOH) as a wet etchant of the nitrides. AlN, AlGaN, and GaN films grown by either metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) were patterned with Ni in 250 {micro}m x 250 {micro}m squares and 5 {micro}m wide lines to create mesas and lines for typical light emitting diode (LED) or laser diode applications. Reactive ion etching was performed in a commercial reactor using BCl{sub 3} pressures ranging from 5 to 30 mTorr. Subsequent wet etching of these lines showed that KOH-based solutions such as AZ400K developer attack not only AlN but also GaN depending upon the quality of the film. Possibilities for using this wet etch as a defect etchant or selective etch of nitrides on SiC are discussed.
- OSTI ID:
- 395030
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%107
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
ALUMINIUM NITRIDES
ETCHING
GALLIUM NITRIDES
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
CHEMICAL VAPOR DEPOSITION
MOLECULAR BEAM EPITAXY
SILICON CARBIDES
PLASMA
RF SYSTEMS
ION BEAMS
SCANNING ELECTRON MICROSCOPY
POTASSIUM HYDROXIDES
DISLOCATIONS