GaN three dimensional nanostructures

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394966

Dmitriev, V; Irvin, K ^[1]; Zubrilov, A; Tsvetkov, D; Nikolaev, V ^[2]; Jakobson, M; Nelson, D; Sitnikova, A ^[3]

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1. Cree Research, Inc., Durham, NC (United States)
2. Cree Research EED, St. Petersburg (Russian Federation)
3. A.F. Ioffe Inst., St. Petersburg (Russian Federation)

The authors report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from {approximately}20 nm to more than 2 {micro}m. The average dot density ranged from 10{sup 7} to 10{sup 9} cm{sup {minus}2}. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

• OSTI ID: 394966
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
DENSITY
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
GALLIUM NITRIDES
MATERIALS
MICROSTRUCTURE
MONOCRYSTALS
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SILICON CARBIDES
SIZE
TRANSMISSION ELECTRON MICROSCOPY