Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:395051

Li, X; Jones, A M; Roh, S D; Turnbull, D A; Reuter, E E; Gu, S Q; Bishop, S G; Coleman, J J ^[1]

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1. Univ. of Illinois, Urbana, IL (United States). Microelectronics Lab.

The authors have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and cathodoluminescence wavelength imaging (CLI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

• OSTI ID: 395051
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
CORRELATIONS
CRYSTAL DEFECTS
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
HYDROGEN
MORPHOLOGY
OPTICAL EQUIPMENT
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS