Growth of InGaN films by MBE at the growth temperature of GaN

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:394946

Singh, R; Moustakas, T D ^[1]

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1. Boston Univ., MA (United States)

The authors report the growth of InGaN alloys over practically the entire composition range at the growth temperature of GaN (700--800 C) by MBE. They found that when the grown films are thick (> 0.3 {micro}m), incorporation of more than about 30% indium results in phase separation of InN, which is consistent with spinodal decomposition. On the other hand the authors discovered that such phase separation is absent in thin InGaN films (< 600 {angstrom}) grown as GaN/InGaN/GaN heterostructures. In such configurations they were able to incorporate up to 81% In, which is the highest yet reported.

• OSTI ID: 394946
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ABSORPTIVITY
CHEMICAL COMPOSITION
COMPOSITE MATERIALS
ELECTRON CYCLOTRON-RESONANCE
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
LASERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION