Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy
- Boston Univ., MA (United States)
In this paper the authors report on the growth, structure and properties of bulk InGaN films, GaN/InGaN/GaN double heterostructures and InGaN/AlGaN multi quantum well structures. The films were grown by Electron Cyclotron Resonance assisted Molecular Beam Epitaxy (ECR-MBE). The structure of the films was determined by X-ray diffraction which showed that for thick films phase separate InN is observed when the indium concentration is more than 30%. Such phase separation was accounted for by Stringfellow`s delta lattice parameter model which predicts the critical temperature for miscibility in the InN-GaN system to be about 2,400 K. Phase separation was not observed in heterostructures containing thin InGaN layers. The luminescence of thick InGaN films shows both transitions across the gap as well as transitions through defects. The latter dominates as the indium concentration increases. On the contrary, luminescence from MQW`s exhibits a narrow luminescence band at room temperature corresponding to the gap of the material.
- OSTI ID:
- 417644
- Report Number(s):
- CONF-960502--; ISBN 1-56677-163-3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ABSORPTIVITY
ALUMINIUM NITRIDES
CRYSTAL GROWTH
ELECTRON CYCLOTRON-RESONANCE
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SUBSTRATES
X-RAY DIFFRACTION