Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

Journal Article · Thu Jan 15 04:00:00 EST 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.10.059· OSTI ID:22420789

Sinha, Neeraj ^[1]; Roul, Basanta ^[2]; Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh ^[2]; Jali, V. M. ^[3]

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1. Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India)
2. Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
3. Department of Physics, Gulbarga University, Gulbarga 585106 (India)

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be ∼2.48 eV. The current–voltage (I–V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log–log plot of the I–V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film.

• OSTI ID: 22420789
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 61; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DISLOCATIONS
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
MOLECULAR BEAM EPITAXY
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPACE CHARGE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRAPPING
X-RAY DIFFRACTION