Bi-epitaxial grain boundaries in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films prepared by pulsed laser deposition and pulsed organometallic beam epitaxy: Direct comparison of transport properties and grain boundary structure
- Materials Science Division and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Conductus, Inc., 969 West Maude Avenue, Sunnyvale, California 94086 (United States)
- Materials Science and Engineering Department, Northwestern University, Evanston, Illinois 60208 (United States)
A set of 45{degree} [001] bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin film grain boundaries was studied to compare the effects of the microstructure on transport properties. The grain boundaries were made using two different deposition techniques: pulsed laser deposition (PLD) and pulsed organometallic beam epitaxy (POMBE). The transport properties were highly dependent on the specific growth conditions used, resulting in both fully resistive and superconducting grain boundaries. Subsequent microstructural analysis of the measured boundaries showed that both types (superconducting and resistive) meandered on the length scale of hundreds of nanometers. The major structural difference between the boundaries was at the atomic scale where the resistive boundary had a 1 nm wide disordered region. The direct correlation of microstructure to transport properties demonstrates the importance of the atomic scale structure in the resulting transport behavior. {copyright} {ital 1996 Materials Research Society.}
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 389279
- Journal Information:
- Journal of Materials Research, Vol. 11, Issue 10; Other Information: PBD: Oct 1996
- Country of Publication:
- United States
- Language:
- English
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