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Title: Effect of sulfur doping on optical anisotropy of CdSiAs{sub 2}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.117345· OSTI ID:388151
; ;  [1]; ;  [2]
  1. Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523 (United States)
  2. Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523 (United States)

Polarization dependent photoluminescence and photocurrent measurements were carried out on undoped and sulfur doped single crystals of CdSiAs{sub 2}. For undoped crystal the interband transition {ital A} shows a 40 meV blueshift under perpendicular light polarization with respect to the parallel one. This shift is about twice as large for sulfur doped crystal. A pronounced photoabsorption band at 1.53 eV, related to the sulfur donor, is observed in the low temperature photocurrent spectrum. A significant enhancement of the optical anisotropy of donor-acceptor transition is seen in the low temperature photoluminescence spectra of CdSiAs{sub 2} doped with sulfur. {copyright} {ital 1996 American Institute of Physics.}

DOE Contract Number:
FG03-95ER12173
OSTI ID:
388151
Journal Information:
Applied Physics Letters, Vol. 69, Issue 19; Other Information: PBD: Nov 1996
Country of Publication:
United States
Language:
English