Excitonic recombination processes in undoped and doped wurtzite GaN films deposited on sapphire substrates
- Sachs/Freeman Association Inc., Landover, MD (United States)
- Hewlett-Packard, San Jose, CA (United States)
- Naval Research Lab., Washington, DC (United States)
Excitonic recombination processes in GaN films grown by low pressure metalorganic chemical vapor deposition technique have been studied in the temperature range between 6K to 320K by photoluminescence spectroscopy. Low temperature photoluminescence spectra of high resistivity films show well-resolved spectral features associated with the excitonic interband transitions. A detailed spectral analysis allowed them to estimate the exciton binding energy and the energy gap. Spectral studies of Si-doped GaN films demonstrate that the high energy recombination processes in these films are dominated by excitons bound to neutral Si donors. Comparison between the recombination channels in high resistivity and in Si-doped films indicated that Si has a larger exciton binding energy than the unknown pervasive donor in undoped materials. These results confirm the excellent electronic properties of the undoped and doped films.
- OSTI ID:
- 394993
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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