Binding energy for the intrinsic excitons in wurtzite GaN
- Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078 (United States)
- Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
We present the results of an experimental study on the binding energy for intrinsic free excitons in wurtzite GaN. High-quality single-crystal GaN films grown by metalorganic chemical vapor deposition were used in this study. Various excitonic transitions in GaN were studied using reflectance measurements. The observation of a series of spectral features associated with the transitions involving the ground and excited exciton states allows us to make a straightforward estimate of exciton binding energy using the hydrogenic model. Our results yield a binding energy {ital E}{sub {ital b}}=0.021{plus_minus}0.001 eV for the {ital A} and {ital B} excitons, and 0.023{plus_minus}0.001 eV for the {ital C} exciton in wurtzite GaN within the framework of the effective mass approximation. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 404020
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 54; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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