Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi{sub 2}Ta{sub 2}O{sub 9} layered perovskites via {ital in} {ital situ}, real-time ion-beam analysis
- Argonne National Laboratory, Materials Science and Chemistry Divisions, Argonne, Illinois 60439 (United States)
- University of North Carolina, Chemistry Department, Chapel Hill, North Carolina 27599-3290 (United States)
- Northwestern University, Department of Materials Science, Evanston, Illinois 60208 (United States)
- MCNC, Electronic Technologies Division, 3021 Cornwallis Rd., Research Triangle Park, North Carolina 27709-2889 (United States)
{ital In} {ital situ}, real-time studies of layered perovskite SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi{sub 2}O{sub 2}){sup 2+}layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors. {copyright} {ital 1996 American Institute of Physics.}
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 388145
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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