Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis.

Journal Article · Wed Jan 01 04:00:00 EST 1997 · Integr. Ferroelectrics

DOI:https://doi.org/10.1080/10584589708221712· OSTI ID:938073

Krauss, A R; Auciello, O; Im, J; Smentkowski, V; Gruen, D M; Irene, E A; Chang, R P. H.

Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi{sub 2}O{sub 2}){sup 2+} layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: ER
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 938073
• Report Number(s): ANL/MSD/JA-26643
• Journal Information: Integr. Ferroelectrics, Journal Name: Integr. Ferroelectrics Journal Issue: 1-4 ; 1997 Vol. 18
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CAPACITORS
FERROELECTRIC MATERIALS
GROWTH
ION SCATTERING ANALYSIS
STRONTIUM OXIDES
TANTALUM OXIDES
THIN FILMS
TIME-OF-FLIGHT METHOD