High resistivity and ultrafast carrier lifetime in argon implanted GaAs

Journal Article · Tue Oct 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117702· OSTI ID:388143

Walukiewicz, W; Liliental-Weber, Z; Jasinski, J ^[1]; Almonte, M; Prasad, A; Haller, E E; Weber, E R ^[2]; Grenier, P; Whitaker, J F ^[3]

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1. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)
3. Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

We have investigated the optoelectronic and structural properties of GaAs that has been implanted with Ar ions and subsequently annealed. The material exhibits all the basic optical and electronic characteristics typically observed in nonstoichiometric, As implanted or low-temperature-grown GaAs. Annealing of Ar implanted GaAs at 600{degree}C produces a highly resistive material with a subpicosecond trapping lifetime for photoexcited carriers. Transmission electron microscopy shows that, instead of As precipitates, characteristic for the nonstoichiometeric GaAs, voids ranging in size from 3 to 5 nm are observed in Ar implanted and annealed GaAs. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 388143
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKYLATING AGENTS
ANNEALING
ARGON IONS
CARRIER LIFETIME
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
ION IMPLANTATION
PRECIPITATION
VOIDS