Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Mikulics, M.; Hardtdegen, H.; Adam, R.; Grützmacher, D.; Gregušová, D.; Novák, J.; Kordoš, P.; Sofer, Z.; Serafini, J.; Zhang, J.; Sobolewski, Roman; Marso, M.

doi:10.1088/0268-1242/29/4/045022

Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Journal Article · Wed Mar 05 04:00:00 EST 2014 · Semiconductor Science and Technology

DOI:https://doi.org/10.1088/0268-1242/29/4/045022· OSTI ID:1129104

Mikulics, M. ^[1]; Hardtdegen, H.; Adam, R.; Grützmacher, D.; Gregušová, D.; Novák, J.; Kordoš, P.; Sofer, Z.; Serafini, J.; Zhang, J.; Sobolewski, Roman; Marso, M.

Laboratory for Laser Energetics, University of Rochester, Rochester, NY

We report on the impact of thermal annealing to carrier transport and transient, subpicosecond photoresponse of freestanding GaAs mesostructures. Our measurements included micro-photoluminescence and dark current and responsivity studies as well as optical femtosecond characterization. The fabricated GaAs mesostructures consisted of both mesowires and platelets that were integrated into coplanar striplines to form a photoconductive switch. We demonstrate that an optimized annealing process of our mesostructures, performed at 600°C for 20 min, led to restoring bulklike properties of our freestanding devices. They exhibited dark currents below 600 pA at 10 V bias, responsivity of 0.2 A W^₋1 at 30 V, and mobility as high as 7300 cm² V s^₋1. The annealed freestanding GaAs photodetectors were characterized by subpicosecond carrier relaxation dynamics with negligible trapping and a cutoff frequency of 1.3 THz. The latter characteristics make them excellent candidates for THz-bandwidth optoelectronics.

Research Organization:: Univ. of Rochester, Rochester, NY(United States). Lab. for Laser Energetics

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0001944

OSTI ID:: 1129104

Report Number(s):: DOE/NA/--1944-1169; 2013-173; 2136

Journal Information:: Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Journal Issue: 4 Vol. 29; ISSN 0268-1242

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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