Generation of THz transients by photoexcited single-crystal GaAs meso-structures

Zhang, Jie; Mikulics, Martin; Adam, Roman; Grützmacher, Detlev; Sobolewski, Roman

doi:10.1007/s00340-013-5495-1

Title: Generation of THz transients by photoexcited single-crystal GaAs meso-structures

Journal Article · Sat May 25 00:00:00 EDT 2013 · Applied Physics. B, Lasers and Optics

DOI:https://doi.org/10.1007/s00340-013-5495-1· OSTI ID:1144012

Zhang, Jie ^[1]; Mikulics, Martin ^[2]; Adam, Roman ^[3]; Grützmacher, Detlev ^[2]; Sobolewski, Roman ^[4]

Univ. of Rochester, NY (United States)
Research Center Jülich (Germany). Peter Grünberg Institut (PGI-9); Jülich-Aachen Research Alliance (JARA) Jülich, Germany
Jülich-Aachen Research Alliance (JARA) Jülich, Germany; Research Center Jülich (Germany). Peter Grünberg Institut (PGI-9)
Univ. of Rochester, NY (United States). Lab. for Laser Energetics; Institute of Electron Technology, Warszawa (Poland)

We report a sub-picosecond photoresponse and THz transient generation of GaAs single-crystal mesoscopic platelets excited by femtosecond optical pulses. Our structures were fabricated by a top-down technique, by patterning an epitaxial, 500-nm-thick GaAs film grown on top of an AlAs sacrificial layer and then transferring the resulting etched away 10 x 20-μm² platelets onto an MgO substrate using a micropipette. The freestanding GaAs devices, incorporated into an Au coplanar strip line, exhibited extremely low dark currents and ~0.4 % detection efficiency at 10 V bias. The all-optical, pump–probe carrier dynamics analysis showed that, for 800-nm-wavelength excitation, the intrinsic relaxation of photocarriers featured a 310-fs-wide transient with a 290 fs fall time. We have also carried out a femtosecond, timeresolved electro-optic characterization of our devices and recorded along the transmission line the electrical transients as short as ~600 fs, when the platelet was excited by a train of 100-fs-wide, 800-nm-wavelength optical laser pulses. The platelets have been also demonstrated to be very efficient generators of free-space propagating THz transients with the spectral bandwidth exceeding 2 THz.The presented performance of the epitaxial, freestanding GaAs meso-structured photodevices makes them uniquely suitable for THz-frequency optoelectronic applications, ranging from ultrafast photodetectors to THz-bandwidth optical-to-electrical transducers and photomixers.

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Research Organization:: Univ. of Rochester, NY (United States). Lab. for Laser Energetics

Sponsoring Organization:: USDOE; US Army Research Office (ARO)

Grant/Contract Number:: FC52-08NA28302; W911NF-12-2-0076

OSTI ID:: 1144012

Report Number(s):: DOE/NA/28302-1176; 2014-168; 2142

Journal Information:: Applied Physics. B, Lasers and Optics, Vol. 113, Issue 3; ISSN 0946-2171

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

References (18)

Terahertz Technology in Biology and Medicine Siegel, P. H. IEEE Transactions on Microwave Theory and Techniques, Vol. 52, Issue 10 https://doi.org/10.1109/TMTT.2004.835916	journal	October 2004
Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low-temperature GaAs for optoelectronic applications Krotkus, A.; Marcinkevicius, S.; Jasinski, J. Applied Physics Letters, Vol. 66, Issue 24 https://doi.org/10.1063/1.113738	journal	June 1995
Broadband detection capability of ZnTe electro‐optic field detectors Wu, Q.; Litz, M.; Zhang, X. ‐C. Applied Physics Letters, Vol. 68, Issue 21 https://doi.org/10.1063/1.116356	journal	May 1996
Observation of terahertz radiation coherently generated by acoustic waves Armstrong, Michael R.; Reed, Evan J.; Kim, Ki-Yong Nature Physics, Vol. 5, Issue 4 https://doi.org/10.1038/nphys1219	journal	March 2009
Growth and optical properties of nanometer‐scale GaAs and InAs whiskers Hiruma, K.; Yazawa, M.; Katsuyama, T. Journal of Applied Physics, Vol. 77, Issue 2 https://doi.org/10.1063/1.359026	journal	January 1995
Coherent submillimeter-wave emission from charge oscillations in a double-well potential Roskos, Hartmut G.; Nuss, Martin C.; Shah, Jagdeep Physical Review Letters, Vol. 68, Issue 14 https://doi.org/10.1103/PhysRevLett.68.2216	journal	April 1992
Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices Adam, R.; Mikulics, M.; Förster, A. Applied Physics Letters, Vol. 81, Issue 18 https://doi.org/10.1063/1.1518159	journal	October 2002
Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy Beard, Matthew C.; Turner, Gordon M.; Schmuttenmaer, Charles A. Physical Review B, Vol. 62, Issue 23 https://doi.org/10.1103/PhysRevB.62.15764	journal	December 2000
Ultra-long-lived coherent acoustic phonons in GaN single crystals Wu, S.; Zhang, J.; Belousov, A. Journal of Physics: Conference Series, Vol. 92 https://doi.org/10.1088/1742-6596/92/1/012021	journal	December 2007
Femtosecond response of a free-standing LT-GaAs photoconductive switch Zheng, Xuemei; Xu, Ying; Sobolewski, Roman Applied Optics, Vol. 42, Issue 9 https://doi.org/10.1364/AO.42.001726	journal	March 2003
Probing ultrafast carrier and phonon dynamics in semiconductors Othonos, Andreas Journal of Applied Physics, Vol. 83, Issue 4 https://doi.org/10.1063/1.367411	journal	February 1998
Terahertz Science and Technology Trends Redo-Sanchez, Albert; Zhang, Xi-Cheng IEEE Journal of Selected Topics in Quantum Electronics, Vol. 14, Issue 2 https://doi.org/10.1109/JSTQE.2007.913959	journal	January 2008
Subpicosecond electron-hole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures Mikulics, Martin; Zhang, Jie; Serafini, John Applied Physics Letters, Vol. 101, Issue 3 https://doi.org/10.1063/1.4737442	journal	July 2012
High-speed photoconductive switch based on low-temperature GaAs transferred on SiO/sub 2/-Si substrate Mikulics, M.; Adam, R. IEEE Photonics Technology Letters, Vol. 15, Issue 4 https://doi.org/10.1109/LPT.2003.809264	journal	April 2003
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species Cui, Yi; Wei, Qingqiao; Park, Hongkun Science, Vol. 293, Issue 5533, p. 1289-1292 https://doi.org/10.1126/science.1062711	journal	August 2001
Exploring Dynamics in the Far-Infrared with Terahertz Spectroscopy Schmuttenmaer, Charles A. Chemical Reviews, Vol. 104, Issue 4 https://doi.org/10.1021/cr020685g	journal	April 2004
Terahertz Wave Air Photonics: Terahertz Wave Generation and Detection With Laser-Induced Gas Plasma Dai, Jianming; Liu, Jingle; Zhang, Xi-Cheng IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 1 https://doi.org/10.1109/JSTQE.2010.2047007	journal	January 2011
Erratum: “Probing ultrafast carrier and phonon dynamics in semiconductors” [J. Appl. Phys. 83, 1789 (1998)] Othonos, Andreas Journal of Applied Physics, Vol. 84, Issue 3 https://doi.org/10.1063/1.368243	journal	August 1998

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