Interfacial roughness and related growth mechanisms in sputtered W/Si multilayers

Journal Article · Thu Aug 01 00:00:00 EDT 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.5860· OSTI ID:383217

Salditt, T; Lott, D; Metzger, T H; Peisl, J ^[1]; Vignaud, G ^[2]; Schaerpf, O ^[3]; Hinze, P; Lauer, R ^[4]

---

1. Sektion Physik der Ludwig-Maximilians-Universitaet Muenchen, Geschwister-Scholl-Platz 1, 80539 Muenchen (Germany)
2. European Synchrotron Radiation Facility, Boite Postale 220, 38043 Grenoble (France)
3. Institut Lane-Langeuin, Boite Postale 156, 38043 Grenoble (France)
4. Physikalisch-Technische Bundesanstalt, Bundesalle 100, 38116 Braunschweig (Germany)

We have studied interfacial roughness in amorphous W/Si multilayers grown by rf sputtering at different deposition parameters by cross-sectional transmission electron microscopy, x-ray reflectivity, and diffuse x-ray scattering. The diffuse scattering intensity has been recorded in an unprecedented wide range of parallel momentum transfer, 5{times}10{sup {minus}4} A{sup {minus}1}{le}{ital q}{sub {parallel}}{le}1 A{sup {minus}1}, giving access to the height-height self- and cross-correlation functions on lateral length scales between a few A and 1 {mu}m. The results are compared for the different samples and discussed in view of the deposition parameters. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 383217
• Journal Information: Physical Review, B: Condensed Matter, Vol. 54, Issue 8; Other Information: PBD: Aug 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
TUNGSTEN
SUPERLATTICES
INTERFACES
AMORPHOUS STATE
SILICON
SPUTTERING
ROUGHNESS
CORRELATION FUNCTIONS
X-RAY DIFFRACTION
REFLECTIVITY