Correlation of interface roughness for ion beam sputter deposited W/Si multilayers

Journal Article · Fri Apr 15 04:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3573662· OSTI ID:21560183

Biswas, A; Bhattacharyya, D ^[1]

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1. Applied Spectroscopy Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

W/Si multilayers having 5, 7, 9, 13, 17, and 25 layers have been deposited on c-Si substrates by Ion Beam Sputtering technique and have been characterized by specular and diffused grazing incidence X-ray reflectivity measurements. Information regarding the density, thickness and interface widths of individual layers of the multilayer stacks have been obtained from the theoretical fitting of the specular reflectivity spectra while fitting of the diffused X-ray reflectivity have yielded information regarding roughness and diffusivity at the individual interfaces along with the in-plane correlation lengths of roughness of the individual layers and the vertical correlation length of the whole multilayer structure. Investigations have been carried out on the different behavior of W-on-Si and Si-on-W interfaces and on the variation of the above parameters with the increase in number of layers in the multilayer structures.

• OSTI ID: 21560183
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CORRELATIONS
DENSITY
DEPOSITION
DIFFUSION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY BEAM DEPOSITION
INTERFACES
ION BEAMS
IONIZING RADIATIONS
LAYERS
MATERIALS
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
REFLECTION
REFLECTIVITY
REFRACTORY METALS
ROUGHNESS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTRA
SPUTTERING
SUBSTRATES
SURFACE COATING
SURFACE PROPERTIES
TRANSITION ELEMENTS
TUNGSTEN
X RADIATION