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Study of interface correlation in W/C multilayer structure by specular and non-specular grazing incidence X-ray reflectivity measurements

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4934746· OSTI ID:22492876
;  [1]; ; ;  [2];  [3]
  1. Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)
  2. Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, VIZAG Centre, Visakhapatnam 530012 (India)
  3. Indus Synchrotron Utilization Division, Raja Raman Centre for Advanced Technology, Indore 452013 (India)
W/C/W tri-layer thin film samples have been deposited on c-Si substrates in a home-built Ion Beam Sputtering system at 1.5 × 10{sup −3} Torr Ar working pressure and 10 mA grid current. The tri-layer samples have been deposited at different Ar{sup +} ion energies between 0.6 and 1.2 keV for W layer deposition and the samples have been characterized by specular and non-specular grazing incidence X-ray reflectivity (GIXR) measurements. By analyzing the GIXR spectra, various interface parameters have been obtained for both W-on-C and C-on-W interfaces and optimum Ar{sup +} ion energy for obtaining interfaces with low imperfections has been found. Subsequently, multilayer W/C samples with 5-layer, 7-layer, 9-layer, and 13-layer have been deposited at this optimum Ar{sup +} ion energy. By fitting the specular and diffused GIXR data of the multilayer samples with the parameters of each interface as fitting variables, different interface parameters, viz., interface width, in-plane correlation length, interface roughness, and interface diffusion have been estimated for each interface and their variation across the depth of the multilayers have been obtained. The information would be useful in realizing W/C multilayers for soft X-ray mirror application in the <100 Å wavelength regime. The applicability of the “restart of the growth at the interface” model in the case of these ion beam sputter deposited W/C multilayers has also been investigated in the course of this study.
OSTI ID:
22492876
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 16 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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