Composition dependence of morphology, structure and thermoelectric properties of FeSi{sub 2} films prepared by sputtering deposition

Journal Article · Thu Aug 01 04:00:00 EDT 1996 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1996.0259· OSTI ID:383107

Tsunoda, T; Mukaida, M; Watanabe, A; Imai, Y ^[1]

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1. Department of Inorganic Materials, National Institute of Materials and Chemical Research, Higashi 1-1, Tsukuba, Ibaraki 305 (Japan)

Direct {beta}{endash}FeSi{sub 2} film preparation from gaseous phase was examined using a radio-frequency (rf) sputtering deposition apparatus equipped with a composite target of iron and silicon. Films composed of only {beta}{endash}FeSi{sub 2} phase were formed at substrate temperatures above 573 K when the chemical composition of the film was very close to stoichiometric FeSi{sub 2}. The {beta}{endash}FeSi{sub 2} films thus formed showed rather large positive Seebeck coefficient. When the chemical composition of the films were deviated to Fe-rich side, {epsilon}{endash}FeSi phase was formed along with {beta}{endash}FeSi{sub 2}. On the other hand, {alpha}{endash}FeSi{sub 2} phase, which is stable above 1210 K in the equilibrium phase diagram, was formed at the substrate temperature as low as 723 K when the chemical composition was deviated to Si-rich side. The formation of {alpha}{endash}FeSi{sub 2} phase induced drastic changes in the morphology and thermoelectric properties of the films. The {alpha}{endash}FeSi{sub 2} phase formed in the films was easily transformed to {beta}{endash}FeSi{sub 2} phase by a thermal treatment. {copyright} {ital 1996 Materials Research Society.}

• OSTI ID: 383107
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 8 Vol. 11; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
IRON SILICIDES
PHASE STUDIES
SPUTTERED MATERIALS
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES
THIN FILMS