Thermal stability study of oxygen implanted AlGaAs/GaAs single quantum well structure using photoreflectance
Book
·
OSTI ID:375957
- Univ. of Surrey, Guildford (United Kingdom). Dept. of Electronic and Electrical Engineering
- Univ. of Cincinnati, OH (United States). Dept. of Physics
- Univ. of Sheffield (United Kingdom). Dept. of Electronic and Electrical Engineering
The effects of interdiffusion on the band structure of two Al{sub x}Ga{sub 1{minus}x}As/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800 C, 900 C and 1,000 C for times up to 180 seconds resulted in limited interdiffusion. Low dose (10{sup 14} cm{sup {minus}2}) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.
- OSTI ID:
- 375957
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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