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Chemical and spectroscopic studies of thin oxide films

Conference ·
OSTI ID:370134
 [1]
  1. Texas A&M Univ., College Station, TX (United States)

Thin oxide films (e.g., 5-10nm of SiO{sub 2}, Al{sub 2}O{sub 3}, NiO, CaO, MgO) supported on a refractory metal substrate (e.g., Mo, W, Ta, Re) have been prepared by deposition of the oxide metal precursor in a background of oxygen. The thin-film nature of these samples facilitates investigation by an army of surface techniques, many of which cannot be effectively utilized on the corresponding bulk oxide. The composition, structural, and electronic properties of these films have been characterized by a variety of surface spectroscopies, including scanning tunneling microscopy (STM). The surface chemical, properties of these model oxide surfaces have been studied with temperature programmed desorption (TPD), high resolution electron energy loss (HREELS), and infrared reflection absorption spectroscopy (IRAS) using a number of probe molecules. The results of these studies demonstrate the viability of using thin oxide films as models for the corresponding bulk oxide.

OSTI ID:
370134
Report Number(s):
CONF-960376--
Country of Publication:
United States
Language:
English

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