X-Ray fluorescence as an {ital in-situ} composition monitor during CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} deposition

Journal Article · Mon Mar 01 04:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57961· OSTI ID:365864

Eisgruber, I L; Wangensteen, T L ^[1]; Marshall, C; Carpenter, B ^[2]

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1. Materials Research Group, Inc., 12441 W. 49th Ave., Suite 2, Wheat Ridge, Colorado 80033-1927 (United States)
2. Lockheed Martin Astronautics, P.O. Box 179, Denver, Colorado 80201-0179 (United States)

The principles of x-ray fluorescence (XRF), and differences between the use of XRF as an {ital in-situ} composition sensor in CIGS module fabrication and the use of XRF in typical applications, are described. It is demonstrated for measurements on CIGS samples how a number of conditions, including interelement effects and composition gradients, may complicate conversion of XRF signals to composition. Factors controlling the precision of the measurement are enumerated. {copyright} {ital 1999 American Institute of Physics.}

• Sponsoring Organization: USDOE
• OSTI ID: 365864
• Report Number(s): CONF-980935--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
COPPER COMPOUNDS
COPPER SELENIDES
DEPOSITION
ERRORS
GALLIUM COMPOUNDS
GALLIUM SELENIDES
INDIUM COMPOUNDS
INDIUM SELENIDES
PHOTOVOLTAIC CELLS
PROCESS CONTROL
SELENIUM COMPOUNDS
THIN FILMS
X-RAY FLUORESCENCE ANALYSIS