III-nitride dry etching: Comparison of inductively coupled plasma chemistries
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
A systematic study of the etch characteristics of GaN, AlN, and InN has been performed with boron halide- (BI{sub 3} and BBr{sub 3}) and interhalogen- (ICl and IBr) based inductively coupled plasmas. Maximum etch selectivities of {approximately}100:1 were achieved for InN over both GaN and AlN in the BI{sub 3} mixtures due to the relatively high volatility of the InI{sub x} etch products and the lower bond strength of InN. Maximum selectivities of {approximately}14 for InN over GaN and {lt}25 for InN over AlN were obtained with ICl and IBr chemistries. The etched surface morphologies of GaN in these four mixtures are similar or better that those of the control sample. {copyright} {ital 1999 American Vacuum Society.}
- OSTI ID:
- 359808
- Report Number(s):
- CONF-981126--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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