Comparison of ICl and IBr for dry etching of III-nitrides
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (United States)
ICl/Ar ECR discharges provide the fastest dry etch rates reported for GaN, 1.3 {micro}m/min. These rates are much higher than with Cl{sub 2}/Ar, CH{sub 4}/H{sub 2}Ar or other plasma chemistries. InN etch rates up to 1.15 {micro}m/min and 0.7 {micro}m/min for In{sub 0.5}Ga{sub 0.5}N are obtained, with selectivities up to 5 with no preferential loss of N at low rf powers and no significant residues remaining. The rates are much lower with IBr/Ar, ranging from 0.15 {micro}m/min for GaN to 0.3 {micro}m/min for InN. There is little dependence on microwave power for either chemistry because of the weakly bound nature of ICl and IBr. In all cases the etch rates are limited by the initial bond breaking that must precede etch product formation and there is a good correlation between materials bond energy and etch rate. The fact that low microwave power can be employed is beneficial from the viewpoint that photoresist masks are stable under these conditions, and there is no need for use of silicon nitride or silicon dioxide. Selectivities for GaN over AlN with ICl and IBr are still lower than with Cl{sub 2{sup {minus}}} only.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 585869
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9810%%73
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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