III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries

Journal Article · Mon Nov 09 23:00:00 EST 1998 · Journal of Vacuum Science and Technology

OSTI ID:1942

Abernathy, C R ^[1]; Cho, H; Donovan, S M; Hahn, Y-B; Han, J; Hays, D C; MacKenzie, J D; Pearton, S J; Shul, R J

---

1. Sandia National Laboratories

A systematic study of the etch characteristics of GaN, AlN and InN has been performed with boron halides- (BI{sub 3} and BBr{sub 3}) and interhalogen- (ICl and IBr) based Inductively Coupled Plasmas. Maximum etch selectivities of -100:1 were achieved for InN over both GaN and AlN in the BI{sub 3} mixtures due to the relatively high volatility of the InN etch products and the lower bond strength of InN. Maximum selectivies of- 14 for InN over GaN and >25 for InN over AlN were obtained with ICl and IBr chemistries. The etched surface morphologies of GaN in these four mixtures are similar or better than those of the control sample.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1942
• Report Number(s): SAND98-2514J; ON: DE00001942
• Journal Information: Journal of Vacuum Science and Technology, Journal Name: Journal of Vacuum Science and Technology
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
Aluminium Nitrides
Boron Bromides
Boron Iodides
Comparative Evaluations
Etching
Gallium Nitrides
Indium Nitrides
Iodine Bromides
Iodine Chlorides
Morphology
Plasma