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Chemical kinetics and equilibrium analysis of I-III-VI films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.57950· OSTI ID:357191
;  [1]
  1. Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)
Preliminary results are presented on the growth and characterization of Cu-In-Se-S thin films formed by reaction of Cu-In layers with a H{sub 2}Se/H{sub 2}S gas mixture. The approach was to first develop a process to grow device quality CuInS{sub 2} films by reaction of a Cu-In layer in H{sub 2}S. This process was then modified to form alloyed CuIn(Se,&hthinsp;S){sub 2} films. A quantitative model for the reaction of Cu-In films in a CVD reactor with a mixed H{sub 2}S-H{sub 2}Se flowing gas was developed and verified. The composition of the CuIn(Se,&hthinsp;S){sub 2} film can be controlled by the concentration H{sub 2}Se+H{sub 2}S and/or Se{sub 2}+S{sub 2} in the gas phase. Graded films can be made by annealing either CuInSe{sub 2} or CuInS{sub 2} films in a controlled Se and/or S containing atmosphere. Expanding this to include Ga in the films will provide a basis for engineering film compositions and bandgaps. {copyright} {ital 1999 American Institute of Physics.}
Sponsoring Organization:
USDOE
OSTI ID:
357191
Report Number(s):
CONF-980935--
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English