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Sequential deposition of Cu(In,Ga)(S,Se){sub 2}

Conference ·
OSTI ID:208012
; ; ; ; ;  [1]
  1. Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik
Several sequential deposition processes for Cu(In,Ga)(S,Se){sub 2} leading to highly efficient thin film solar cells are described. Secondary phases and interdiffusion determine the growth mechanism of a process consisting of InSe{sub x} and Cu deposition at a low substrate temperature followed by a high temperature selenization step. Complex phase transitions are involved in the formation of CuInS{sub 2} by this inverted process. The presence of a secondary CuS phase leads to a complete recrystallization of the film. Alloys of CuInSe{sub 2} with CuInS{sub 2} can be formed with the inverted process. Devices based on these absorber layers exhibit efficiencies up to nearly 16% for Cu(In,Ga)Se{sub 2} and nearly 12% for CuInS{sub 2}.
OSTI ID:
208012
Report Number(s):
CONF-941203--; ISBN 0-7803-1459-X
Country of Publication:
United States
Language:
English