Silicon-film{trademark} substrates adapted for low-cost GaAs-based solar cells
- AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000 (United States)
The utilization of polycrystalline silicon or silicon-on-ceramic material as a surrogate substrate for epitaxial GaAs-based solar cells is described. A close-spaced vapor transport (CSVT) process has been developed for epitaxial growth of germanium and GaAs {open_quotes}buffer{close_quotes} layers on polycrystalline silicon. A selective mode of epitaxial growth is preferred due to its potential for stress reduction and monolithic series interconnection. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 355391
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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