Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates
Conference
·
OSTI ID:304309
- AstroPower, Inc., Newark, DE (United States)
The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.
- OSTI ID:
- 304309
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silicon-film{trademark} substrates adapted for low-cost GaAs-based solar cells
Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
Journal Article
·
Sun Feb 28 23:00:00 EST 1999
· AIP Conference Proceedings
·
OSTI ID:355391
Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
Journal Article
·
Sat Nov 30 23:00:00 EST 1985
· J. Appl. Phys.; (United States)
·
OSTI ID:6407339
Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
Journal Article
·
Sat Nov 30 23:00:00 EST 1985
· J. Appl. Phys.; (United States)
·
OSTI ID:6392238