The effect of high-resistance SnO{sub 2} on CdS/CdTe device performance
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
In this paper, we have studied the effect of high-resistance SnO{sub 2} buffer layers, deposited by low-pressure chemical-vapor deposition, on CdS/CdTe device performance. Our results indicate that when CdS/CdTe devices have a very thin layer of CdS or no CdS at all, the i-SnO{sub 2} buffer layer helps to increase device efficiency. When the CdS layer is thicker than 600 {Angstrom}, the device performance is dominated by CdS thickness, not the i-SnO{sub 2} layer. If a very thin CdS layer is to be used to enhance device performance, we conclude that a better SnO{sub 2} buffer layer is needed. {copyright} {ital 1999 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Laboratory
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 355377
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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